INTERFERENCE EFFECTS IN THE ELECTRICAL-CONDUCTIVITY TENSORS OF DOPED POLAR SEMICONDUCTORS

被引:1
作者
EYKHOLT, R
MILLS, DL
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D O I
10.1016/0003-4916(86)90006-0
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O4 [物理学];
学科分类号
0702 ;
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页码:386 / 432
页数:47
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共 14 条
  • [1] BIR GL, 1961, SOV PHYS-SOL STATE, V2, P2039
  • [2] SIGN OF RAMAN TENSOR OF DIAMOND AND ZINCBLENDE-TYPE SEMICONDUCTORS
    CARDONA, M
    CERDEIRA, F
    FJELDLY, TA
    [J]. PHYSICAL REVIEW B, 1974, 10 (08): : 3433 - 3435
  • [3] INTERACTION BETWEEN ELECTRONIC AND VIBRONIC RAMAN-SCATTERING IN HEAVILY DOPED SILICON
    CERDEIRA, F
    FJELDLY, TA
    CARDONA, M
    [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (03) : 325 - 328
  • [4] EFFECT OF FREE CARRIERS ON ZONE-CENTER VIBRATIONAL MODES IN HEAVILY DOPED P-TYPE SI .2. OPTICAL MODES
    CERDEIRA, F
    FJELDLY, TA
    CARDONA, M
    [J]. PHYSICAL REVIEW B, 1973, 8 (10): : 4734 - 4745
  • [5] RAMAN STUDY OF INTERACTION BETWEEN LOCALIZED VIBRATIONS AND ELECTRONIC EXCITATIONS IN BORON-DOPED SILICON
    CERDEIRA, F
    FJELDLY, TA
    CARDONA, M
    [J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4344 - 4350
  • [6] EYKHOLT R, UNPUB
  • [7] EFFECTS OF CONFIGURATION INTERACTION ON INTENSITIES AND PHASE SHIFTS
    FANO, U
    [J]. PHYSICAL REVIEW, 1961, 124 (06): : 1866 - &
  • [8] Fetter A L, 1971, QUANTUM THEORY MANY
  • [9] THEORY OF TRANSPORT PHENOMENA IN AN ELECTRON-PHONON GAS
    HOLSTEIN, T
    [J]. ANNALS OF PHYSICS, 1964, 29 (03) : 410 - 535
  • [10] BAND STRUCTURE OF INDIUM ANTIMONIDE
    KANE, EO
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261