CW LASER ANNEALING OF POLYCRYSTALLINE SILICON ON SIO2 AND EFFECTS OF SUCCESSIVE FURNACE ANNEALING

被引：6
作者：
KUGIMIYA, K
FUSE, G
INOUE, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1982年 / 21卷 / 01期
关键词：
D O I：
10.1143/JJAP.21.L19
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L19 / L21
页数：3
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  • [1] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES
    GAT, A
    GERZBERG, L
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    MAGEE, TJ
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    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778
  • [2] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
    IRVIN, JC
    [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
  • [3] CRYSTAL-STRUCTURE AND THERMAL-OXIDATION OF LASER-RECRYSTALIZED POLYCRYSTALLINE SILICON
    KAMINS, TI
    LEE, KF
    GIBBONS, JF
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 550 - 553
  • [4] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE
    LAM, HW
    TASCH, AF
    HOLLOWAY, TC
    [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 206 - 208
  • [5] RING OSCILLATORS FABRICATED IN LASER-ANNEALED SILICON-ON-INSULATOR
    LAM, HW
    TASCH, AF
    HOLLOWAY, TC
    LEE, KF
    GIBBONS, JF
    [J]. ELECTRON DEVICE LETTERS, 1980, 1 (06): : 99 - 100
  • [6] ELECTRICAL-PROPERTIES OF CW LASER-ANNEALED ION-IMPLANTED POLYCRYSTALLINE SILICON
    ROULET, ME
    DUTOIT, M
    LUTHY, W
    AFFOLTER, K
    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 737 - 739
  • [7] RESISTIVITY CHANGES IN LASER-ANNEALED POLYCRYSTALLINE SILICON DURING THERMAL ANNEALING
    SHIBATA, T
    IIZUKA, H
    KOHYAMA, S
    GIBBONS, JF
    [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 21 - 23
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