CURRENT GAIN RECOVERY IN SILICON-NITRIDE PASSIVATED PLANAR TRANSISTORS BY HYDROGEN IMPLANTATION

被引：10

作者：

KELLNER, W

GOETZBERGER, A

机构：

[1] SIEMENS AG,FORSCH LAB,MUNICH D-8000,FED REP GER

[2] INST ANGEW FESTKORPER PHYS,FREIBURG D-7800,FED REP GER

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 08期

关键词：

D O I：

10.1109/T-ED.1975.18174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：531 / 533

页数：3

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