EFFECT OF MN ON DEFECT STATES IN ZNIN2SE4

Znln2Se4 polycrystalline samples were synthesized with small amounts of manganese and their optical absorption spectra examined. It was found that pure material shows the presence of defect states very close to the conduction and valence bands; however, the presence of manganese atoms reduces the density of defects and, at 0.3 at% of Mn, the defect states located very close to the conduction and valence bands are eliminated. The observed results are explained by considering that the Mn atoms tend to occupy the Zn vacancy sites and reduce antisite-induced disorder.