PHOTON-GATED PHOTOCHEMICAL HOLE-BURNING USING ZINC TETRAPHENYLPORPHINE AND VARIOUS ELECTRON ACCEPTORS

被引：6
|
作者：
TAMURA, S
KISHII, N
ASAI, N
SETO, J
机构：
[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama, 240
来源：
JOURNAL OF LUMINESCENCE | 1993年 / 56卷 / 1-6期
关键词：
D O I：
10.1016/0022-2313(93)90059-V
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have studied the photon-gated photochemical hole burning (PHB) which occurs due to an electron transfer reaction between the higher excited state of zinc tetraphenylporphine and a series of electron accepters with various reduction potentials. The reaction activity of the PHB is dependent on the free energy change of the reaction and PHB was not observed in the highly exothermic region.
引用
收藏
页码：93 / 97
页数：5
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