ELECTRON-BEAM CONTROLLED SWITCHING USING QUARTZ AND POLYCRYSTALLINE ZNS

被引：4
作者：
JIANG, WH
ZINSMEYER, K
LESS, M
SCHOENBACH, KH
KRISTIANSEN, M
机构：
[1] OLD DOMINION UNIV,PHYS ELECTR RES INST,NORFOLK,VA 23529
[2] TEXAS TECH UNIV,DEPT ELECT ENGN,PULSED POWER LAB,LUBBOCK,TX 79409
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 04期
关键词：
D O I：
10.1109/16.278513
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results of electron-beam controlled switching experiments with switch samples of quartz crystal and polycrystalline zinc selenide (ZnSe) are presented. For switch samples of both materials, drastic reductions of the switch resistance were induced by the electron beam. The quartz sample showed very fast temporal response (less than 1 ns) with potential applicability for current control. The ZnSe samples, on the other hand, showed longer current transients (on the order of 10 ns) with exponential development of the switch resistance after the electron beam pulse.
引用
收藏
页码：582 / 586
页数：5
相关论文
共 8 条
[1]   MODELING OF ELECTRON-BEAM-CONTROLLED SEMICONDUCTOR SWITCHES [J].
BRINKMANN, RP .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (01) :318-323
[2]   THE LOCK-ON EFFECT IN ELECTRON-BEAM-CONTROLLED GALLIUM-ARSENIDE SWITCHES [J].
BRINKMANN, RP ;
SCHOENBACH, KH ;
STOUDT, DC ;
LAKDAWALA, VK ;
GERDIN, GA ;
KENNEDY, MK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (04) :701-705
[3]  
BRINKMANN RP, 1991, 8TH IEEE INT PULS PW, P94
[4]   PHOTOCONDUCTIVE SWITCHING USING POLYCRYSTALLINE ZNSE [J].
HO, PT ;
PENG, F ;
GOLDHAR, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (12) :2517-2519
[5]   STUDIES OF HIGH-FIELD CONDUCTION IN DIAMOND FOR ELECTRON-BEAM CONTROLLED SWITCHING [J].
JOSHI, RP ;
KENNEDY, MK ;
SCHOENBACH, KH ;
HOFER, WW .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (10) :4781-4787
[6]   ELECTRON-BEAM-CONTROLLED HIGH-POWER SEMICONDUCTOR SWITCHES [J].
SCHOENBACH, KH ;
LAKDAWALA, VK ;
STOUDT, DC ;
SMITH, TF ;
BRINKMANN, RP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1793-1802
[7]  
SCHOENBACH KH, 1992, SPIE, V1632, P203
[8]   THE RECOVERY BEHAVIOR OF SEMI-INSULATING GAAS IN ELECTRON-BEAM-CONTROLLED SWITCHES [J].
STOUDT, DC ;
SCHOENBACH, KH ;
BRINKMANN, RP ;
LAKDAWALA, VK ;
GERDIN, GA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (12) :2478-2485
1