ELECTRICAL PROPERTIES OF NICKEL-LOW-DOPED N-TYPE GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES

被引：131
作者：
HACKAM, R
HARROP, P
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 12期
关键词：
D O I：
10.1109/T-ED.1972.17586
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1231 / +
页数：1
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