CHARGE STORAGE AND DISTRIBUTION IN THE NITRIDE LAYER OF THE METAL-NITRIDE-OXIDE SEMICONDUCTOR STRUCTURES

被引：39
作者：
KAPOOR, VJ
TURI, RA
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 01期
关键词：
D O I：
10.1063/1.328495
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：311 / 319
页数：9
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