LOW-NOISE COOLED GASFET AMPLIFIERS

[21] LANE R, COMMUNICATION

[22] PERFORMANCE OF GAAS MESFETS AT LOW-TEMPERATURES [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 376 - 381

[23] NOISE PERFORMANCE OF MICROWAVE GAAS FET AMPLIFIERS AT LOW-TEMPERATURES [J]. ELECTRONICS LETTERS, 1977, 13 (01) : 10 - 11

[24] NARA A, COMMUNICATION

[25] NEVIN L, 1979, MICROWAVE J, V22, P82

[26] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 695 - &

[27] PIERRO J, 1979, INT MICROWAVE S DIG, P28

[28] PUCEL RA, 1975, ADV ELECTRONICS ELEC, V38

[29] THERMAL-CONDUCTIVITY OF AN ELECTRICALLY CONDUCTING EPOXY BELOW 3 K [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1977, 48 (12) : 1715 - 1715

[30] THEORY OF NOISY FOURPOLES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (06): : 811 - 818

[21] LANE R, COMMUNICATION

[22] PERFORMANCE OF GAAS MESFETS AT LOW-TEMPERATURES [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 376 - 381

[23] NOISE PERFORMANCE OF MICROWAVE GAAS FET AMPLIFIERS AT LOW-TEMPERATURES [J]. ELECTRONICS LETTERS, 1977, 13 (01) : 10 - 11

[24] NARA A, COMMUNICATION

[25] NEVIN L, 1979, MICROWAVE J, V22, P82

[26] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 695 - &

[27] PIERRO J, 1979, INT MICROWAVE S DIG, P28

[28] PUCEL RA, 1975, ADV ELECTRONICS ELEC, V38

[29] THERMAL-CONDUCTIVITY OF AN ELECTRICALLY CONDUCTING EPOXY BELOW 3 K [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1977, 48 (12) : 1715 - 1715

[30] THEORY OF NOISY FOURPOLES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (06): : 811 - 818