LOW-NOISE COOLED GASFET AMPLIFIERS

被引：73

作者：

WEINREB, S

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1980年 / 28卷 / 10期

关键词：

D O I：

10.1109/TMTT.1980.1130223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1041 / 1054

页数：14

相关论文

共 59 条

[1] NOISE BEHAVIOR OF GAAS FIELD-EFFECT TRANSISTORS WITH SHORT GATE LENGTHS
BAECHTOLD, W
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 674 - +
[2] DESIGN OF GAAS FIELD-EFFECT TRANSISTOR-AMPLIFIER COOLED TO VERY LOW-TEMPERATURE
BRUNETBRUNOL, D
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (04): : 180 - 187
[3] BURNS DM, 1978, THESIS U CALIFORNIA
[4] MODEL FOR LATTICE THERMAL CONDUCTIVITY AT LOW TEMPERATURES
CALLAWAY, J
[J]. PHYSICAL REVIEW, 1959, 113 (04): : 1046 - 1051
[5] COOKE HF, 1978, MICROWAVES, P55
[6] COOKE HF, HIGH FREQUENCY TRA 3
[7] EMELYANENKO OV, 1961, SOV PHYS-SOL STATE, V3, P144
[8] EFFECTS OF INTERVALLEY SCATTERING ON NOISE IN GAAS AND INP FIELD-EFFECT TRANSISTORS
FREY, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) : 1298 - 1303
[9] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET
FUKUI, H
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03): : 771 - 797
[10] DESIGN OF MICROWAVE GAAS-MESFETS FOR BROAD-BAND LOW-NOISE AMPLIFIERS
FUKUI, H
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (07) : 643 - 650

← 1 2 3 4 5 6 →