INVESTIGATION OF RADIATION-INDUCED INTERFACE STATES UTILIZING GATED-BIPOLAR AND MOS STRUCTURES

被引：17

作者：

SIVO, LL

HUGHES, HL

KING, EE

机构：

[1] BOEING CO, SEATTLE, WA 98124 USA

[2] USN, RES LAB, WASHINGTON, DC 20390 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1972年 / NS19卷 / 06期

关键词：

D O I：

10.1109/TNS.1972.4326850

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：313 / 319

页数：7

相关论文

共 18 条

[1] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR
AUBUCHON, KG
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +
[2] INFLUENCE OF NON-UNIFORMLY DOPED SUBSTRATES ON MOS C-V CURVES
BROTHERTON, SD
BURTON, P
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (12) : 1591 - +
[3] CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[4] ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN SI-SIO2 INTERFACES
FAHRNER, W
GOETZBERGER, A
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (01) : 16 - +
[5] GNADINGER AP, 1970, COMPUTER PROGRAM ANA
[6] GOETZBER.A, 1966, AT&T TECH J, V45, P1097
[7] SILICON-SILICON DIOXIDE SYSTEM
GRAY, PV
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1543 - +
[8] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS
GROVE, AS
FITZGERALD, DJ
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 783 - +
[9] HOLMESSIEDLE AD, 1967, NAS510177 CONTR
[10] SURFACE-STATE RELATED L/F NOISE IN P-N JUNCTIONS AND MOS TRANSISTORS
HSU, ST
FITZGERALD, DJ
GROVE, AS
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (09) : 287 - +