INVESTIGATION OF RADIATION-INDUCED INTERFACE STATES UTILIZING GATED-BIPOLAR AND MOS STRUCTURES

被引：17
作者：
SIVO, LL
HUGHES, HL
KING, EE
机构：
[1] BOEING CO, SEATTLE, WA 98124 USA
[2] USN, RES LAB, WASHINGTON, DC 20390 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1972年 / NS19卷 / 06期
关键词：
D O I：
10.1109/TNS.1972.4326850
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：313 / 319
页数：7
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