RADIATIVE DECAY OF EXCITONIC STATES IN BULKLIKE GAAS WITH A PERIODIC ARRAY OF INAS LATTICE PLANES

We study radiative recombination processes in a GaAs crystal that has periodically inserted InAs lattice planes. The photoluminescence spectra are dominated by transitions related to the eigenstates of excitons and hydrogenic impurities, both localized by the InAs planes. Probing these two final relaxation states by photoluminescence excitation spectroscopy reveals competition between different decay mechanisms, manifested by additional transitions below the fundamental absorption edge of GaAs. © 1990 The American Physical Society.