THIN-FILM ELECTROLUMINESCENCE OF ZNS-TB-3+

被引：3
|
作者：
KHOMCHENKO, VS [1 ]
KONONEC, YF [1 ]
VLASENKO, NA [1 ]
MACH, R [1 ]
REINSPERGER, GU [1 ]
SELLE, B [1 ]
REETZ, R [1 ]
机构：
[1] ACAD SCI GDR,CENT INST ELECTRON PHYS,O-1086 BERLIN,GERMANY
来源：
JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期
关键词：
Zinc Sulfide;
D O I：
10.1016/0022-0248(90)91120-F
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Light conversion efficiencies up to 2 lm/W can be reached in ZnS:Tb thin film electroluminescence devices. Rapid degradation, however, is caused by such extreme overdoping. In general the decrease of efficiency during aging has no counterparts in changing spectra or in carrier acceleration/center excitation, so that it should be related to a diminishing content of excitable centers, possibly by segregation to existing clusters and/or Tb-rich phases. Rather stable operation can be achieved in the 0.5-0.8 lm/W range. © 1989.
引用
收藏
页码：994 / 998
页数：5
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