PREPARATIONS OF ZNO-AL TRANSPARENT CONDUCTING FILMS BY DC MAGNETRON SPUTTERING

被引：138

作者：

MINAMI, T ^{[1
]}

OOHASHI, K ^{[1
]}

TAKATA, S ^{[1
]}

MOURI, T ^{[1
]}

OGAWA, N ^{[1
]}

机构：

[1] TOSOH CORP,CHEM LAB,YAMAGUCHI 746,JAPAN

来源：

THIN SOLID FILMS | 1990年 / 193卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(90)90224-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly conductive and transparent films of aluminium-doped ZnO (AZO) have been prepared by d.c. magnetron sputtering on a substrate placed parallel to the target. The spatial distributions of resistivity and thickness on the parallel substrate are controlled by plasma-controlled magnetron sputtering (PCMS) in an external d.c. magnetic field. AZO films with a resistivity as low as 2.7 x 10(-4)-OMEGA-cm can be produced on the substrate at temperatures above 250-degrees-C by the newly developed PCMS. The reduction in resistivity with increasing substrate temperature is related to the improvement in crystallinity of the AZO films. The carrier-scattering mechanism which dominates the mobility of the AZO films with the lowest resistivity is discussed from the experimental results and theoretical analysis.

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页码：721 / 729

页数：9

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