MOLECULAR-BEAM EPITAXIAL-GROWTH OF METASTABLE GE1-XSNX ALLOYS

被引：35
作者：
PIAO, J
BERESFORD, R
LICATA, T
WANG, WI
机构：
[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027
[2] CUNY BROOKLYN COLL,DEPT PHYS,BROOKLYN,NY 11210
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期
关键词：
D O I：
10.1116/1.584814
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：221 / 226
页数：6
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