IMPACT IONIZATION COEFFICIENTS IN IN0.53GA0.47AS

被引：23
|
作者：
URQUHART, J
ROBBINS, DJ
TAYLOR, RI
MOSELEY, AJ
机构：
[1] Plessey Res. Caswell Ltd., Towcester
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 07期
关键词：
D O I：
10.1088/0268-1242/5/7/026
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
There is a surprising sparsity of experimental information on electron and hole impact ionisation coefficients in In0.53Ga0.47As, and the only available results are in wide disagreement. In this letter, results for electron and hole ionisation coefficients, alpha and beta , are presented for In0.53Ga0.47As, alpha and beta have been calculated from photocurrent gain measurements (using both mixed and pure electron injection) made on In0.53Ga0.47As/InP p-i-n structures fabricated from three separate wafers. The values for alpha and beta are in good agreement with those found by Osaka et al. (1986), whereas Pearsall's results (1980) are an order of magnitude higher.
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收藏
页码：789 / 791
页数：3
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