EFFECT OF OXYGEN ON RF-SPUTTERING RATE OF SIO2

被引：63
作者：
JONES, RE
WINTERS, HF
MAISSEL, LI
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1968年 / 5卷 / 03期
关键词：
D O I：
10.1116/1.1492586
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：84 / &
相关论文
共 7 条
[1]  
CHANIN LM, 1962, PHYS REV, V128, P129
[2]   DIELECTRIC THIN FILMS THROUGH RF SPUTTERING [J].
DAVIDSE, PD ;
MAISSEL, LI .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :574-&
[3]   ELEKTRISCHE LEITFAHIGKEIT UND STRUKTUR AUFGESTAUBTER KADMIUMOXYDSCHICHTEN [J].
HELWIG, G .
ZEITSCHRIFT FUR PHYSIK, 1952, 132 (05) :621-642
[4]   RE-EMISSION COEFFICIENTS OF SI AND SIO2 FILMS DEPOSITED THROUGH RF AND DC SPUTTERING [J].
JONES, RE ;
STANDLEY, CL ;
MAISSEL, LI .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) :4656-&
[5]  
STERN EA, PRIVATE COMMUNICATIO
[6]  
VALLETTA RM, 1966, ELECTROCHEM TECHNOL, V4, P402
[7]   SURFACE CLEANING BY CATHODE SPUTTERING [J].
YONTS, OC ;
HARRISON, DE .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) :1583-1584
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