LOW LEAKAGE CURRENT GAAS DIODES

[1] INFLUENCE OF BULK AND SURFACE PROPERTIES ON IMAGE SENSING SILICON DIODE ARRAYS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (09): : 1827 - +

[2] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643

[3] CASEY HC, 1979, APPL PHYS LETT, V34, P594, DOI 10.1063/1.90886

[4] APPLICATION OF SELECTIVE CHEMICAL-REACTION CONCEPT FOR CONTROLLING THE PROPERTIES OF OXIDES ON GAAS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (03) : 237 - 238

[5] DISTRIBUTION OF ELECTRICALLY ACTIVE MG IMPLANTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4742 - 4746

[6] PROPERTIES OF BE-IMPLANTED PLANAR GAAS P-N-JUNCTIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 426 - 429

[7] HELIX MJ, 1977, IEDM TECH DIG, P195

[8] MG AND BE ION IMPLANTED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1318 - +

[9] APPLICATION OF SCANNING ELECTRON-MICROSCOPY TO DETERMINATION OF SURFACE RECOMBINATION VELOCITY - GAAS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 537 - 539

[10] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[1] INFLUENCE OF BULK AND SURFACE PROPERTIES ON IMAGE SENSING SILICON DIODE ARRAYS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (09): : 1827 - +

[2] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643

[3] CASEY HC, 1979, APPL PHYS LETT, V34, P594, DOI 10.1063/1.90886

[4] APPLICATION OF SELECTIVE CHEMICAL-REACTION CONCEPT FOR CONTROLLING THE PROPERTIES OF OXIDES ON GAAS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (03) : 237 - 238

[5] DISTRIBUTION OF ELECTRICALLY ACTIVE MG IMPLANTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4742 - 4746

[6] PROPERTIES OF BE-IMPLANTED PLANAR GAAS P-N-JUNCTIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 426 - 429

[7] HELIX MJ, 1977, IEDM TECH DIG, P195

[8] MG AND BE ION IMPLANTED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1318 - +

[9] APPLICATION OF SCANNING ELECTRON-MICROSCOPY TO DETERMINATION OF SURFACE RECOMBINATION VELOCITY - GAAS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 537 - 539

[10] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032