SIMPLE TIGHT-BINDING CALCULATION OF TRANSVERSE EFFECTIVE CHARGES IN III-V, II-VI, AND IV-IV COMPOUND SEMICONDUCTORS

被引：50
作者：
LANNOO, M [1 ]
DECARPIGNY, JN [1 ]
机构：
[1] INST SUPER ELECTR NORD, CNRS, 3 RUE FRANCOIS BAES, 59046 LILLE, FRANCE
来源：
PHYSICAL REVIEW B | 1973年 / 8卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.8.5704
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5704 / 5710
页数：7
相关论文
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