SIMPLE TIGHT-BINDING CALCULATION OF TRANSVERSE EFFECTIVE CHARGES IN III-V, II-VI, AND IV-IV COMPOUND SEMICONDUCTORS

被引：50

作者：

LANNOO, M ^{[1
]}

DECARPIGNY, JN ^{[1
]}

机构：

[1] INST SUPER ELECTR NORD, CNRS, 3 RUE FRANCOIS BAES, 59046 LILLE, FRANCE

来源：

PHYSICAL REVIEW B | 1973年 / 8卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.8.5704

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5704 / 5710

页数：7

共 13 条

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[3]

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[4]

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[8] ON DESCRIPTION OF COVALENT BONDS IN DIAMOND LATTICE STRUCTURES BY A SIMPLIFIED TIGHT-BINDING APPROXIMATION [J].

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[9]

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[10] IONICITY OF CHEMICAL BOND IN CRYSTALS [J].

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