A MIXED METHOD FOR THE MIXED INITIAL-BOUNDARY VALUE-PROBLEMS OF EQUATIONS OF SEMICONDUCTOR-DEVICES

被引：8
作者：
ZHU, J [1 ]
WU, HW [1 ]
WANG, YM [1 ]
机构：
[1] SOUTHEAST UNIV, DEPT MATH & MECH, NANJING 210018, PEOPLES R CHINA
来源：
SIAM JOURNAL ON NUMERICAL ANALYSIS | 1994年 / 31卷 / 03期
关键词：
MIXED METHOD; MIXED INITIAL BOUNDARY VALUE PROBLEM; SEMICONDUCTOR DEVICE EQUATION;
D O I：
10.1137/0731039
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
In this article, the approximation of nonstationary equations of the semiconductors device with mixed boundary conditions is considered. The approximate procedures of this system using a Galerkin method that makes use of a mixed finite element method for the potential equation combined with a finite element method for the concentration equations is presented. Due to the poor regularity properties of the solutions to the semiconductor equations caused by mixed boundary conditions, a nonstandard analysis for the semidiscrete Galerkin procedure is used. Existence and uniqueness of the approximate solution is proved. A convergence analysis is also given for the method.
引用
收藏
页码：731 / 744
页数：14
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