NUMERICAL MODELING OF A MICROMACHINED THERMAL-CONDUCTIVITY GAS-PRESSURE SENSOR

被引：23
作者：
ALLEGRETTO, W
SHEN, B
HASWELL, P
LAI, ZS
ROBINSON, AM
机构：
[1] UNIV ALBERTA,CTR MICROELECTR,EDMONTON T6G 2G7,AB,CANADA
[2] UNIV ALBERTA,DEPT ELECT ENGN,EDMONTON T6G 2G7,AB,CANADA
[3] E CHINA NORMAL UNIV,DEPT ELECTR,SHANGHAI,PEOPLES R CHINA
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1994年 / 13卷 / 10期
基金：
加拿大自然科学与工程研究理事会;
关键词：
D O I：
10.1109/43.317468
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
We have developed a software package that simulates the operation of a silicon micromachined CMOS thermal conductivity gas pressure gauge. The performance of actual devices was compared against the simulated operation and was found to be in good agreement. The 3-dimensional simulation was reduced to two 2-dimensional simulations to reduce complexity. The two equations resulting from steady state energy balance considerations were discretized and an iterative nonlinear Gauss-Seidel procedure applied to solve the system of equations. Temperature profiles and contours were calculated and the effect of geometric and materials modifications was demonstrated.
引用
收藏
页码：1247 / 1256
页数：10
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