CURRENT CHARACTERISTICS OF POLYCRYSTALLINE THIN-FILM TRANSISTORS USING SPUTTERED SILICON FILMS

被引:7
作者
TONG, KY
JELENKOVIC, EV
机构
[1] Department of Electronic Engineering, Hong Kong Polytechnic, Hung Hom, Hong Kong
关键词
D O I
10.1016/0038-1101(93)90260-W
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Polycrystalline thin-film transistors using sputtered Si films followed by high temperature crystallization have been fabricated and characterised. An analytical model has been proposed to explain the current-voltage characteristics of the TFT covering the sub-threshold, linear and saturation regions. The model assumes a spatial uniform distribution of trap states consisting of tail and deep states. The tail states have an exponential distribution within the bandgap, and the deep states are found to have a uniform distribution. The trap parameters can be easily extracted, and the model gives excellent agreement with experimental results.
引用
收藏
页码:513 / 517
页数:5
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