DIAMOND SILICON HETEROJUNCTION STRUCTURES

被引：1
作者：
JENG, DG
TUAN, HS
SALAT, RF
FRICANO, GJ
CHEN, FY
机构：
[1] SUNY STONY BROOK, DEPT ELECT ENGN, STONY BROOK, NY 11794 USA
[2] VACTR LAB EQUIPMENT INC, BOHEMIA, NY 11716 USA
[3] SUNY STONY BROOK, DEPT MAT SCI ENGN, STONY BROOK, NY 11794 USA
来源：
DIAMOND AND RELATED MATERIALS | 1992年 / 1卷 / 09期
关键词：
D O I：
10.1016/0925-9635(92)90115-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Diamond/silicon heterojunctions (DSHJs) and related characteristics have been studied. Heterojunctions can be obtained by growing p-type diamond films (DFs) on p-type silicon substrates to form homotype (p-p) DSHJs; or by growing p-type diamond films on n-type silicon substrates to form heterotype (p-n) DSHJs via the route of chemical vapor deposition (CVD). DSHJs have been characterized by studying current-voltage (I-V) curves which showed rectifying. These DSHJ curves are different from those produced by metal/diamond junctions.
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收藏
页码：945 / 948
页数：4
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