THICKNESS DEPENDENCE OF DC LEAKAGE CURRENT IN LEAD ZIRCONATE-TITANATE (PZT) MEMORIES

被引：44

作者：

MELNICK, BM

SCOTT, JF

DEARAUJO, CAP

MCMILLAN, LD

机构：

[1] UNIV COLORADO,DEPT ELECT & COMP ENGN,COLORADO SPRINGS,CO 80933

[2] SYMETRIX CORP,COLORADO SPRINGS,CO 80918

来源：

FERROELECTRICS | 1992年 / 135卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1080/00150199208230022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured the voltage (field) dependence, the thickness dependence, and the temperature dependence of d.c. leakage currents in PbZr0.40Ti0.60O3. In agreement with our earlier results [Scott et al., 1. Appl. Phys. 70, 382 (1991)], the voltage dependence is given by I(V) = AV + B(V - V0)2, implying space-charge limited currents. In addition, in the present work we find that I(d) = C/d3 at constant voltage, where d is the thickness and C is a constant dependent upon voltage and cross-sectional area. This inverse-cubic dependence of current confirms that the leakage is dominated by space charge effects.

引用

页码：163 / 168

页数：6