INTERFACE PROPERTIES OF STRAINED INGAAS/INP QUANTUM-WELLS GROWN BY LP-MOVPE

被引：3

作者：

SCHWEDLER, R

GALLMANN, B

WOLTER, K

KOHL, A

LEO, K

KURZ, H

JUILLAGUET, S

CAMASSEL, J

LAURENTI, JP

BAUMANN, FH

机构：

[1] Institute of Semiconductor Electronics, RWTH Aachen

[2] Groupe d'Etude des Semiconducteurs, Université des Sciences et Techniques du Languedoc, Montpellier

[3] Centre Lorrain d'Optique et Electronique des Solides, Université de Metz

[4] AT and T Bell Laboratories, Holmdel, NY

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90566-A

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have analysed ultrathin (5-10 monolayers) In1-xGaxAs/InP (0.17 less-than-or-equal-to x less-than-or-equal-to 1) quantum wells grown by low-pressure metal organic vapour phase epitaxy using optical spectroscopy and transmission electron microscopy. We find, for all compositions, evidence for a complex interface structure at both the lower and the upper interface. Both originate from interdiffusion of arsenic and phosphorus at growth time. The influence of the interface structure on the optical transition energies is discussed in detail.

引用

页码：891 / 894

页数：4

共 6 条

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[3] Juillaguet, Laurenti, Schwedler, Wolter, Camassel, Kurz, Non-Stoichiometry in Semiconductors, (1992)
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[5] Wolter, Schwedler, Gallmann, Jaekel, Stollenwerk, Camassel, Laurenti, Juillaguet, Proceedings ESSDERC 91, (1991)
[6] Schwedler, Gallmann, Wolter, Grutzmacher, Stollenwerk, Kurz, Non-Stoichiometry in Semiconductors, (1992)

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