PERIODIC FACETING ON VICINAL GAAS(110) SURFACES DURING EPITAXIAL-GROWTH

被引：44
|
作者：
KRISHNAMURTHY, M [1 ]
WASSERMEIER, M [1 ]
WILLIAMS, DRM [1 ]
PETROFF, PM [1 ]
机构：
[1] UNIV CALIF SANTA BARBARA,QUEST,CTR SCI & TECHNOL,SANTA BARBARA,CA 93106
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 16期
关键词：
D O I：
10.1063/1.109545
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The formation and evolution of quasiperiodic microfacets on vicinal GaAs (110) surfaces grown by molecular beam epitaxy was investigated with transmission electron microscopy and modeled using Monte Carlo simulations. Layers of GaAs and (Al,Ga)As were grown on surfaces misoriented 0-degrees-2-degrees toward (010) (steps in the [001] direction). Under the growth conditions studied, the vicinal surfaces form quasiperiodic microfacets oriented along the step direction. The time evolution of the facet density and facet height as a function of vicinal angle indicate that the formation of microfacets is a result of kinetically limited step bunching during step-flow growth.
引用
收藏
页码：1922 / 1924
页数：3
相关论文
共 50 条
  • [1] ADATOM MOBILITY ON VICINAL SURFACES DURING EPITAXIAL-GROWTH
    LUSE, CN
    ZANGWILL, A
    VVEDENSKY, DD
    WILBY, MR
    SURFACE SCIENCE, 1992, 274 (02) : L535 - L540
  • [2] MICROSCOPIC THEORY OF EPITAXIAL-GROWTH ON VICINAL SURFACES
    HARRIS, S
    PHYSICAL REVIEW B, 1993, 47 (16): : 10738 - 10742
  • [3] EPITAXIAL-GROWTH OF II-VI SEMICONDUCTORS ON VICINAL GAAS-SURFACES
    FEUILLET, G
    CIBERT, J
    LIGEON, E
    GOBIL, Y
    SAMINADAYAR, K
    TATARENKO, S
    CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 389 - 394
  • [4] CONCENTRATION PROFILES OF SURFACE ATOMS DURING EPITAXIAL-GROWTH ON VICINAL SURFACES
    SHITARA, T
    SUZUKI, T
    VVEDENSKY, DD
    NISHINAGA, T
    APPLIED PHYSICS LETTERS, 1993, 62 (12) : 1347 - 1349
  • [5] MISORIENTATION DEPENDENCE OF EPITAXIAL-GROWTH ON VICINAL GAAS(001)
    SHITARA, T
    VVEDENSKY, DD
    WILBY, MR
    ZHANG, J
    NEAVE, JH
    JOYCE, BA
    PHYSICAL REVIEW B, 1992, 46 (11): : 6825 - 6833
  • [6] NONLINEAR EQUATION FOR DIFFUSION AND ADATOM INTERACTIONS DURING EPITAXIAL-GROWTH ON VICINAL SURFACES
    MYERSBEAGHTON, AK
    VVEDENSKY, DD
    PHYSICAL REVIEW B, 1990, 42 (09): : 5544 - 5554
  • [7] EPITAXIAL-GROWTH OF BI ON GAAS(100) SURFACES
    HORNG, S
    KAHN, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 931 - 935
  • [8] NONLINEAR DIFFUSION EQUATION FOR EPITAXIAL-GROWTH AND RECOVERY ON VICINAL SURFACES
    MYERSBEAGHTON, AK
    VVEDENSKY, DD
    JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 162 - 167
  • [9] INSITU RAMAN STUDIES DURING THE EPITAXIAL-GROWTH OF ZNSE LAYERS ON GAAS(110)
    NOWAK, C
    ZAHN, DRT
    ROSSOW, U
    RICHTER, W
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 2066 - 2071
  • [10] Growth modes in homoepitaxy on vicinal GaAs(110) surfaces
    Tejedor, P
    Smilauer, P
    Joyce, BA
    SURFACE SCIENCE, 1999, 424 (2-3) : L309 - L313
12345