PERIODIC FACETING ON VICINAL GAAS(110) SURFACES DURING EPITAXIAL-GROWTH

被引：44

作者：

KRISHNAMURTHY, M ^{[1
]}

WASSERMEIER, M ^{[1
]}

WILLIAMS, DRM ^{[1
]}

PETROFF, PM ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,QUEST,CTR SCI & TECHNOL,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 16期

关键词：

D O I：

10.1063/1.109545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation and evolution of quasiperiodic microfacets on vicinal GaAs (110) surfaces grown by molecular beam epitaxy was investigated with transmission electron microscopy and modeled using Monte Carlo simulations. Layers of GaAs and (Al,Ga)As were grown on surfaces misoriented 0-degrees-2-degrees toward (010) (steps in the [001] direction). Under the growth conditions studied, the vicinal surfaces form quasiperiodic microfacets oriented along the step direction. The time evolution of the facet density and facet height as a function of vicinal angle indicate that the formation of microfacets is a result of kinetically limited step bunching during step-flow growth.

引用

页码：1922 / 1924

页数：3

共 18 条

[1] CHARACTERIZATION OF SURFACE FACETING ON (110)GAAS/GAAS GROWN BY MOLECULAR-BEAM EPITAXY
ALLEN, LTP
WEBER, ER
WASHBURN, J
PAO, YC
ELLIOT, AG
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 87 (2-3) : 193 - 200
[2] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES
BURTON, WK
CABRERA, N
FRANK, FC
[J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358
[3] LATERAL MOTION OF TERRACE WIDTH DISTRIBUTIONS DURING STEP-FLOW GROWTH
CHALMERS, SA
TSAO, JY
GOSSARD, AC
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (06) : 645 - 647
[4] Chernov A. A., 1984, MODERN CRYSTALLOGRAP
[5] NONPLANAR STEP AND TERRACE CONFIGURATED SURFACES AS TEMPLATES FOR CRYSTAL-GROWTH DYNAMICS STUDIES
COLAS, E
NIHOUS, GC
HWANG, DM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 691 - 696
[6] ANISOTROPIC OPTICAL-PROPERTIES OF (110)-ORIENTED QUANTUM-WELLS
GERSHONI, D
BRENER, I
BARAFF, GA
CHU, SNG
PFEIFFER, LN
WEST, K
[J]. PHYSICAL REVIEW B, 1991, 44 (04): : 1930 - 1933
[7] THE KINETICS OF FAST STEPS ON CRYSTAL-SURFACES AND ITS APPLICATION TO THE MOLECULAR-BEAM EPITAXY OF SILICON
GHEZ, R
IYER, SS
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (06) : 804 - 818
[8] EVOLUTION OF TERRACE SIZE DISTRIBUTIONS DURING THIN-FILM GROWTH BY STEP-MEDIATED EPITAXY
GOSSMANN, HJ
SINDEN, FW
FELDMAN, LC
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) : 745 - 752
[9] FORMATION OF QUANTUM-WELL WIRE-LIKE STRUCTURES BY MBE GROWTH OF ALGAAS/GAAS SUPERLATTICES ON GAAS (110) SURFACES
HASEGAWA, S
SATO, M
MAEHASHI, K
ASAHI, H
NAKASHIMA, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 371 - 375
[10] KRISHNAMURTHY M, 1992, MATER RES SOC SYMP P, V237, P473

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