DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON

[1] GOLD IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (10) : 588 - 591

[2] CRANK J, 1956, MATHEMATICS DIFFUSIO, P148

[3] A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 13 - &

[4] HASSION FX, 1956, COMMUNICATION

[5] HOWARD BT, 1957, OCT FALL M EL SOC BU

[6] IRVIN JC, 1960, COMMUNICATION

[7] LOGAN MA, 1961, BELL SYST TECH J

[8] LOGAN RA, 1960, COMMUNICATION

[9] MACKINTOSH IM, 1961, UNPUB J ELECTROCHEM

[10] ROLLET J, 1878, SB AKAD WISS WIEN, V57, P299

[1] GOLD IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (10) : 588 - 591

[2] CRANK J, 1956, MATHEMATICS DIFFUSIO, P148

[3] A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 13 - &

[4] HASSION FX, 1956, COMMUNICATION

[5] HOWARD BT, 1957, OCT FALL M EL SOC BU

[6] IRVIN JC, 1960, COMMUNICATION

[7] LOGAN MA, 1961, BELL SYST TECH J

[8] LOGAN RA, 1960, COMMUNICATION

[9] MACKINTOSH IM, 1961, UNPUB J ELECTROCHEM

[10] ROLLET J, 1878, SB AKAD WISS WIEN, V57, P299