THE BAND-STRUCTURE FOR SUPERLATTICES OF DEGENERATE VALENCE BAND SEMICONDUCTORS

被引：0

作者：

GERCHIKOV, LG ^{[1
]}

ROZHNOV, GV ^{[1
]}

SUBASHIEV, AV ^{[1
]}

机构：

[1] LENINGRAD STATE TECH UNIV,LENINGRAD,USSR

来源：

ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI | 1992年 / 101卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Within the Kane model the miniband spectrum of semiconducting superlattices containing the layers of narrow-band or gapless semiconductors is studied analytically. The dispersion equation for the miniband spectra of electrons, light and heavy holes is derived. The expressions are found also for the effective masses of the minibands, involving the transformation effects of carriers at heteroboundaries. The analysis for the general properties of the energetic spectrum in the GaAs - GaxAl1-xAs and HgTe-CdTe superlattices is performed. The reconstruction of the spectrum in the HgTe-CdTe superlattice (semiconductor - semimetal - semiconductor) with varying the structure parameters is described.

引用

页码：143 / 162

页数：20

共 18 条

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