HOT-ELECTRON NOISE IN III-V HETEROJUNCTION FIELD-EFFECT TRANSISTORS

被引：4
|
作者：
ZIMMERMANN, J
CAPPY, A
机构：
[1] Univ. des Sci. et Tech. de Lille-Flandres-Artois, Villeneuve d'Ascq
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期
关键词：
D O I：
10.1088/0268-1242/7/3B/122
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The knowledge of hot electron noise properties in FETs and their dependence on biasing conditions and frequency is essential in device optimization. The recent development of submicron gate MODFETs with epitaxial III-V semiconductor heterolayers has considerably complicated the problem of producing accurate device models able to predict at the same time the static and microwave characteristics and the noise results as well. Low cost and fast simulators that can be implemented on small computers are in high demand in the device industry. In this paper we try to describe the present state of this problem.
引用
收藏
页码：B468 / B473
页数：6
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