DESIGN OF RELIABLE VLSI CIRCUITS USING SIMULATION TECHNIQUES

被引：10

作者：

HSU, WJ ^{[1
]}

SHEU, BJ ^{[1
]}

GOWDA, SM ^{[1
]}

机构：

[1] UNIV SO CALIF,INST SIGNAL & IMAGE PROC,LOS ANGELES,CA 90089

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1991年 / 26卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/4.75036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reliable VLSI circuits are crucial building blocks of high-quality electronic systems. An iterative simulation method of predicting the impact of progressive device degradation on circuit performance due to common microelectronic failure mechanisms is described. Hot-carrier effects on submicrometer digital and analog circuits are used to demonstrate the approach. Experimental results on precharging circuitry for sense amplifiers and operational amplifiers are presented.

引用

页码：452 / 457

页数：6

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