WELL-SIZE DEPENDENCE OF ELECTROOPTIC EFFECTS IN GAINASP/INP QUANTUM-WELLS GROWN BY GSMBE

被引：3
作者：
STARCK, C [1 ]
MOLLOT, F [1 ]
MALLECOT, F [1 ]
PEYRE, JL [1 ]
BOULOU, M [1 ]
机构：
[1] LAB MICROSTRUCT & MICROELECTR,CNRS,F-92220 BAGNEUX,FRANCE
来源：
JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(92)90416-G
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Wannier-Stark and quantum confined Stark effects are demonstrated in GaInAs/InP and GaInAsP/InP quantum well structures grown by gas source molecular beam epitaxy. The structures are characterized by photoluminescence and photocurrent spectroscopy. The analysis of the absorption edge of wells of different sizes shows that wide GaInAsP wells are preferable for the realization of QCSE absorption modulators at 1.55-mu-m. A blue shift of 16 meV under an electric field of 20 kV/cm has been observed in a GaInAs/InP Wannier-Stark structure.
引用
收藏
页码：349 / 352
页数：4
相关论文
共 50 条
  • [1] OMVPE GROWTH OF GAINAS/INP AND GAINAS/GAINASP QUANTUM-WELLS
    KAMEI, H
    HAYASHI, H
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 567 - 572
  • [2] THE EFFECTS OF ROUGHNESS AND COMPOSITION VARIATION AT THE INP/INGAAS AND INGAAS/INP INTERFACES ON CBE GROWN QUANTUM-WELLS
    ANTOLINI, A
    FRANCESIO, L
    GASTALDI, L
    GENOVA, F
    LAMBERTI, C
    LAZZARINI, L
    PAPUZZA, C
    RIGO, C
    SALVIATI, G
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 189 - 193
  • [3] SHARP INTERFACES IN GAINASP-INP SINGLE QUANTUM WELLS GROWN BY MOVPE
    IRIKAWA, M
    MURGATROYD, IJ
    IJICHI, T
    MATSUMOTO, N
    NAKAI, A
    KASHIWA, S
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 370 - 375
  • [4] ELECTROOPTIC EFFECTS OF PIEZOELECTRICALLY STRAINED ALGAAS/GAAS(111) QUANTUM-WELLS
    SHANK, SM
    WICKS, GW
    JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 440 - 444
  • [5] WELL-SIZE DEPENDENCE OF EXCITON BLUE SHIFT IN GAAS MULTIPLE-QUANTUM-WELL STRUCTURES
    HULIN, D
    MYSYROWICZ, A
    ANTONETTI, A
    MIGUS, A
    MASSELINK, WT
    MORKOC, H
    GIBBS, HM
    PEYGHAMBARIAN, N
    PHYSICAL REVIEW B, 1986, 33 (06): : 4389 - 4391
  • [6] OPTICAL PROPERTY OF INASP/INP STRAINED QUANTUM-WELLS GROWN ON INP (111)B AND (100) SUBSTRATES
    HOU, HQ
    TU, CW
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (09) : 4673 - 4679
  • [7] INTERFACE PROPERTIES OF STRAINED INGAAS/INP QUANTUM-WELLS GROWN BY LP-MOVPE
    SCHWEDLER, R
    GALLMANN, B
    WOLTER, K
    KOHL, A
    LEO, K
    KURZ, H
    JUILLAGUET, S
    CAMASSEL, J
    LAURENTI, JP
    BAUMANN, FH
    MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 891 - 894
  • [8] INGAAS/INP QUANTUM-WELLS AND QUANTUM WIRES GROWN BY VAPOR LEVITATION EPITAXY USING CHLORIDE TRANSPORT
    COX, HM
    MORAIS, PC
    HWANG, DM
    BASTOS, P
    GMITTER, TJ
    NAZAR, L
    WORLOCK, JM
    YABLONOVITCH, E
    HUMMEL, SG
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 119 - 124
  • [9] INGAAS/INP QUANTUM-WELLS AND QUANTUM WIRES GROWN BY VAPOR LEVITATION EPITAXY USING CHLORIDE TRANSPORT
    COX, HM
    MORAIS, PC
    HWANG, DM
    BASTOS, P
    GMITTER, TJ
    NAZAR, L
    WORLOCK, JM
    YABLONOVITCH, E
    HUMMEL, SG
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 119 - 124
  • [10] WELL-WIDTH DEPENDENCE OF THE EXCITON LIFETIME IN GAAS/ALGAAS QUANTUM-WELLS
    JIN, SR
    XU, ZY
    LUO, JS
    LUO, CP
    XU, JZ
    ZHENG, BZ
    ACTA PHYSICA SINICA-OVERSEAS EDITION, 1994, 3 (05): : 384 - 389
12345