AMBIENT GAS INFLUENCE ON PHOTO-LUMINESCENCE INTENSITY FROM INP AND GAAS CLEAVED SURFACES

被引:36
作者
NAGAI, H
NOGUCHI, Y
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10.1063/1.90351
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O59 [应用物理学];
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页码:312 / 314
页数:3
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[1]   EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].
CASEY, HC ;
BUEHLER, E .
APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249
[2]   DEGRADATION OF PHOTOLUMINESCENCE INTENSITY CAUSED BY EXCITATION-ENHANCED OXIDATION OF GAAS SURFACES [J].
SUZUKI, T ;
OGAWA, M .
APPLIED PHYSICS LETTERS, 1977, 31 (07) :473-475