EPITAXIAL EFFECTS ON COHERENT PHASE-DIAGRAMS OF ALLOYS

被引:80
作者
WOOD, DM
ZUNGER, A
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10.1103/PhysRevB.40.4062
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T [工业技术];
学科分类号
08 ;
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页码:4062 / 4089
页数:28
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[1]  
ALLOVON M, UNPUB
[2]   GROWTH AND CHARACTERIZATION OF GAASSB-GAALASSB LATTICE-MATCHED HETEROJUNCTIONS [J].
ANTYPAS, GA ;
MOON, RL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) :416-418
[3]   GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (001), (111)A, AND (111)B GAAS SUBSTRATES [J].
ASAI, H ;
OE, K .
JOURNAL OF CRYSTAL GROWTH, 1983, 62 (01) :67-74
[4]   GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES [J].
ASAI, H ;
OE, K .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6849-6851
[5]  
BELLON J, UNPUB
[6]   CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].
BELLON, P ;
CHEVALIER, JP ;
MARTIN, GP ;
DUPONTNIVET, E ;
THIEBAUT, C ;
ANDRE, JP .
APPLIED PHYSICS LETTERS, 1988, 52 (07) :567-569
[7]  
BENEKING H, 1975, I PHYS C SER, V24, P113
[8]   ORDERING OF ISOVALENT INTERSEMICONDUCTOR ALLOYS [J].
BERNARD, JE ;
FERREIRA, LG ;
WEI, SH ;
ZUNGER, A .
PHYSICAL REVIEW B, 1988, 38 (09) :6338-6341
[9]   CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].
BRANTLEY, WA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535
[10]   STRUCTURAL TRANSITIONS IN EPITAXIAL OVERLAYERS [J].
BRUINSMA, R ;
ZANGWILL, A .
JOURNAL DE PHYSIQUE, 1986, 47 (12) :2055-2073