STRUCTURAL AND ELECTRONIC-PROPERTIES OF AG/SI(111) AND AU/SI(111) SURFACES

被引：17
|
作者：
MARKERT, K [1 ]
PERVAN, P [1 ]
HEICHLER, W [1 ]
WANDELT, K [1 ]
机构：
[1] MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 04期
关键词：
D O I：
10.1116/1.576161
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：2873 / 2878
页数：6
相关论文
共 50 条
  • [21] STRUCTURAL AND ELECTRONIC-PROPERTIES OF PSEUDOMORPHIC FESI1+X FILMS ON SI(111)
    ONDA, N
    SIRRINGHAUS, H
    MULLER, E
    VONKANEL, H
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 634 - 637
  • [22] ELECTRONIC-PROPERTIES OF THE ANNEALED INTERFACE BETWEEN AG AND 7X7 SI(111)
    BOLMONT, D
    CHEN, P
    SEBENNE, CA
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (22): : 3313 - 3319
  • [23] ELECTRONIC STATES OF SI(111) SURFACES
    HOUZAY, F
    GUICHAR, GM
    PINCHAUX, R
    PETROFF, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 860 - 865
  • [24] SURFACE PHOTOVOLTAGE INVESTIGATIONS OF THE ELECTRONIC-PROPERTIES OF SI(111) SURFACES ANNEALED IN HIGH-VACUUM
    SZUBER, J
    THIN SOLID FILMS, 1984, 115 (01) : 27 - 31
  • [25] FIM, RHEED STUDIES ON ATOMIC STRUCTURE OF SI(111) AND SI(111)-AG SURFACES
    PARK, TS
    CHUNG, CI
    JUNG, SM
    JEON, DZ
    JOURNAL DE PHYSIQUE, 1988, 49 (C-6): : 275 - 280
  • [26] Structural and electronic properties of barium-induced surfaces on Si(111): Barium disilicide and Si(111)2 x 8 reconstruction
    Kubo, Osamu
    Otsuka, Takuro
    Okasaka, Shouta
    Osaka, Shun
    Tabata, Hiroshi
    Katayama, Mitsuhiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (08)
  • [27] Surface conductivity for Au or Ag on Si(111)
    Jiang, CS
    Hasegawa, S
    Ino, S
    PHYSICAL REVIEW B, 1996, 54 (15): : 10389 - 10392
  • [28] Electronic structures and the charge transfer of Au overlayer on Si(111) surfaces
    Murayama, M
    Nakayama, T
    Natori, A
    APPLIED SURFACE SCIENCE, 2000, 159 (159) : 45 - 49
  • [29] ELECTRONIC-PROPERTIES OF AG MONOLAYERS ON (111)CU
    BORENSZTEIN, Y
    EUROPHYSICS LETTERS, 1987, 4 (06): : 723 - 728
  • [30] THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES
    OSSICINI, S
    BISI, O
    BERTONI, CM
    VACUUM, 1990, 41 (1-3) : 681 - 683
12345