STRUCTURAL AND ELECTRONIC-PROPERTIES OF AG/SI(111) AND AU/SI(111) SURFACES

被引：17

作者：

MARKERT, K ^{[1
]}

PERVAN, P ^{[1
]}

HEICHLER, W ^{[1
]}

WANDELT, K ^{[1
]}

机构：

[1] MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.576161

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2873 / 2878

页数：6

共 50 条

[1] EFFECT OF ANNEALING ON THE STRUCTURAL AND ELECTRONIC-PROPERTIES OF AU COVERED SI(111) SURFACES
TALEBIBRAHIMI, A
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PROIX, F
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1986, 4 (05): : 2331 - 2335
[2] ELECTRONIC-PROPERTIES OF SI(111) SEMICONDUCTOR SURFACES
FLORES, F
MUNOZ, A
MARTINRODERO, A
TEJEDOR, C
LOUIS, E
SURFACE SCIENCE, 1985, 162 (1-3) : 156 - 162
[3] EFFECT OF CU DEPOSITION ON STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) SURFACES
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MERCIER, V
SEBENNE, CA
BOLMONT, D
CHEN, P
SURFACE SCIENCE, 1985, 152 (APR) : 1228 - 1238
[4] THE AU-SI(111) INTERFACE - GROWTH MODE, ENERGETICS, STRUCTURAL AND ELECTRONIC-PROPERTIES
LELAY, G
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) : 551 - 557
[5] ELECTRONIC-PROPERTIES AND ATOMIC ARRANGEMENT OF THE AG-SI(111) INTERFACE
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HANAWA, T
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[6] EFFECT OF VACUUM ANNEALINGS ON THE ELECTRONIC-PROPERTIES OF CLEAN SI(111) SURFACES
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LACHARME, JP
SEBENNE, CA
PHYSICAL REVIEW B, 1991, 43 (18): : 14441 - 14446
[7] Photoemission of Xe adsorbed on Si(111)7x7, Ag/Si(111), Au/Si(111) and O/Si(111) surfaces
Pervan, P
Markert, K
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APPLIED SURFACE SCIENCE, 1997, 108 (03) : 307 - 317
[8] INFLUENCE OF DISORDER ON THE ELECTRONIC-PROPERTIES OF THE SI(111) SURFACE
RODRIGUES, DE
WEISZ, JF
PHYSICAL REVIEW B, 1987, 35 (11): : 5744 - 5748
[9] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG
BOLMONT, D
CHEN, P
SEBENNE, CA
PROIX, F
PHYSICAL REVIEW B, 1981, 24 (08): : 4552 - 4559
[10] ELECTRONIC-PROPERTIES OF THE CR-SI(111) INTERFACES
HSU, CC
LI, BQ
DING, SN
VACUUM, 1990, 41 (1-3) : 690 - 692

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