共 17 条
- [1] DONOR BINDING-ENERGIES IN MULTIVALLEY SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (21): : L605 - L609
- [2] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1973, 8 (06) : 2697 - 2709
- [3] VALLEY-ORBIT INTERACTION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (12): : 4673 - +
- [4] OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP [J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1926 - &
- [5] BOUND-EXCITON ABSORPTION IN SI=AL, SI=GA, AND SI=IN [J]. PHYSICAL REVIEW B, 1978, 17 (04): : 1808 - 1815
- [6] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320
- [7] Koster G. F., 1963, PROPERTIES 32 POINT
- [8] FINE-STRUCTURE IN BOUND EXCITON AND MULTIPLE BOUND EXCITON LUMINESCENCE FROM ALUMINUM-DOPED SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (09): : L247 - L250
- [9] BINDING OF AN EXCITON TO A NEUTRAL ACCEPTOR [J]. SOLID STATE COMMUNICATIONS, 1976, 18 (11-1) : 1557 - 1560