EFFECTS OF WELL NUMBER, CAVITY LENGTH, AND FACET REFLECTIVITY ON THE REDUCTION OF THRESHOLD CURRENT OF GAAS/ALGAAS MULTIQUANTUM WELL LASERS

被引：50
作者：
KUROBE, A
FURUYAMA, H
NARITSUKA, S
SUGIYAMA, N
KOKUBUN, Y
NAKAMURA, M
机构：
[1] Toshiba Corp, Kawasaki, Jpn, Toshiba Corp, Kawasaki, Jpn
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 04期
关键词：
D O I：
10.1109/3.172
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
12
引用
收藏
页码：635 / 639
页数：5
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