RELATIONSHIP BETWEEN THE CONCENTRATION OF DEEP EL2 CENTERS AND DISLOCATION DENSITY IN SEMIINSULATING GAAS

被引:0
|
作者
KARTAVYKH, AV
MARKOV, AV
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 09期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1074 / 1075
页数:2
相关论文
共 50 条
  • [41] EL2 RELATED DEEP TRAPS IN SEMI-INSULATING GAAS
    DESNICA, UV
    DESNICA, DI
    SANTIC, B
    APPLIED PHYSICS LETTERS, 1991, 58 (03) : 278 - 280
  • [42] CHARGE STATE DENSITY PROFILING OF EL2 DEEP DONOR IN GAAS USING SELECTIVE EXCITATION LUMINESCENCE
    TAJIMA, M
    IINO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (05): : L841 - L844
  • [43] SYMMETRY OF THE EL2 CENTER IN GAAS
    BAGRAEV, NT
    JETP LETTERS, 1991, 53 (11) : 573 - 578
  • [44] On the energy level of EL2 in GaAs
    Semiconductor Research Center, Wright State University, Dayton, OH 45435, United States
    Solid-State Electron., 7 (1317-1319):
  • [46] NEAR-INFRARED TRANSMISSION MEASUREMENT OF EL2 CONCENTRATION IN SEMIINSULATING GAAS WAFERS WITH A LASER DIODE (LAMBDA=1.3-MU-M)
    PAN, CL
    WU, HH
    HSIEH, TR
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (07): : 1430 - 1431
  • [47] METASTABLE STATE OF EL2 IN GAAS
    DELERUE, C
    LANNOO, M
    STIEVENARD, D
    VONBARDELEBEN, HJ
    BOURGOIN, JC
    PHYSICAL REVIEW LETTERS, 1987, 59 (25) : 2875 - 2878
  • [48] SYMMETRY OF THE EL2 CENTER IN GaAs
    Bagraev, N. T.
    MODERN PHYSICS LETTERS B, 1991, 5 (29): : 1925 - 1931
  • [49] EL2 IN GAAS - PRESENT STATUS
    BARAFF, GA
    ACTA PHYSICA POLONICA A, 1992, 82 (04) : 599 - 607
  • [50] METASTABILITY OF EL2 DEFECT IN GAAS
    WALCZAK, JP
    KAMINSKA, M
    BARANOWSKI, JM
    ACTA PHYSICA POLONICA A, 1987, 71 (03) : 337 - 339