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- [3] DIRECT EVIDENCE FOR A CHARGE-CONTROLLED OPTICAL QUENCHING OF EL2 CENTERS IN SEMIINSULATING GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (5A): : 1889 - 1897
- [4] DEEP-ACCEPTOR-MEDIATED PHOTOQUENCHING OF THE MIDGAP DONOR EL2 IN SEMIINSULATING GAAS PHYSICAL REVIEW B, 1995, 52 (03): : 1666 - 1673
- [6] GENERATION KINETICS OF EL2 CENTERS IN GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01): : L18 - L20
- [10] RELATION BETWEEN THE METASTABILITY OF EL2 AND THE PHOTOSENSITIVITY OF LOCAL VIBRATIONAL-MODES IN SEMIINSULATING GAAS PHYSICAL REVIEW B, 1995, 52 (07): : 4864 - 4869