VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF GA1-YINYAS1-XPX QUATERNARY ALLOYS

被引：37

作者：

SUGIYAMA, K ^{[1
]}

KOJIMA, H ^{[1
]}

ENDA, H ^{[1
]}

SHIBATA, M ^{[1
]}

机构：

[1] NIPPON TELEG & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 12期

关键词：

D O I：

10.1143/JJAP.16.2197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2197 / 2203

页数：7

共 23 条

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[7] ELECTRON-MICROPROBE CHARACTERIZATION OF VAPOR-GROWN INAS1-XPX LAYERS [J].

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[8] PULSED ROOM-TEMPERATURE OPERATION OF IN1-XGAXP1-ZASZ DOUBLE HETEROJUNCTION LASERS AT HIGH-ENERGY (6470 A, 1.916 EV) [J].

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