VACANCY CREATION BY HELIUM TRAPPING AT SUBSTITUTIONAL KRYPTON IN TUNGSTEN

被引：47

作者：

VANVEEN, A

CASPERS, LM

KORNELSEN, EV

FASTENAU, R

VANGORKUM, A

WARNAAR, A

机构：

[1] DELFT UNIV TECHNOL,INTERUNIV REACTOR INST,DEPT APPL PHYS,DELFT,NETHERLANDS

[2] NATL RES COUNCIL CANADA,ELEKTR PHYS SECT,OTTAWA,ONTARIO,CANADA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 40卷 / 01期

关键词：

D O I：

10.1002/pssa.2210400131

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：235 / 246

页数：12

共 13 条

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[2]

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[3] INTERSTITIAL HELIUM CLUSTERING IN MOLYBDENUM - EFFECT ON SURFACE BLISTERING [J].

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VANVEEN, A ;

VANDAM, H .

PHYSICS LETTERS A, 1974, A 50 (05) :351-352

[4] VACANCY CREATION DURING LOW-ENERGY ION-BOMBARDMENT [J].

EDWARDS, D ;

KORNELSEN, EV .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 26 (03) :155-160

[5]

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[6]

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[9]

OEN OS, 1976, NUCL INSTRUM METHODS, V132, P647, DOI 10.1016/0029-554X(76)90806-5

[10]

Schultz H., 1973, Proceedings of the 1973 International Conference on Defect Clusters in B.C.C. Metals and their Alloys, P394

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