CORRELATION OF VERY THIN SILICON DIOXIDE QUALITY WITH HAZE ON POLISHED SILICON-WAFERS

被引:0
作者
TU, H [1 ]
ZHANG, C [1 ]
XONG, D [1 ]
WAN, Q [1 ]
XU, X [1 ]
机构
[1] GEN RES INST NONFERROUS MET,BEIJING,PEOPLES R CHINA
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D O I
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中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:C125 / C125
页数:1
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[41]   CARRIER LIFETIME MEASUREMENTS IN SILICON-WAFERS [J].
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