CALCULATION OF SHIFT OF AVALANCHE TRANSIT-TIME PHASE DELAY DUE TO OPTICALLY INJECTED CARRIERS IN INDIUM-PHOSPHIDE AVALANCHE-DIODES

被引：5

作者：

BANERJEE, JP

MUKHERJEE, R

机构：

[1] Department of Electronic Science, University of Calcutta, Calcutta 700009, 92, Acharya Prafulla Chandra Road

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 20期

关键词：

AVALANCHE DIODES; TRANSIT TIME DEVICES; INDIUM PHOSPHIDE;

D O I：

10.1049/el:19941158

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A computer method for the calculation of the phase shift due to optically injected carriers in an InP avalanche transit time diode has been suggested using the numerically simulated negative resistance profiles in the depletion layer of the diode. The results show that the phase shift due to hole injection is larger than that due to electron injection which explains the pronounced effect of photogenerated hole leakage current in modulating the microwave properties of InP diodes.

引用

页码：1716 / 1717

页数：2

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