RADIATION EFFECTS ON SOI ANALOG DEVICES PARAMETERS

被引：6
作者：
FLAMENT, O
LERAY, JL
MARTIN, JL
MONTARON, J
RAFFAELLI, M
BLANC, JP
DELEVOYE, E
GAUTIER, J
PELLOIE, JL
DEPONCHARRA, J
TRUCHE, R
DELAGNES, E
DENTAN, M
FOURCHES, N
机构：
[1] CEA DTA LETI,F-38041 GRENOBLE,FRANCE
[2] CEA,DSM DAPNIA SACLAY,F-91191 GIF SUR YVETTE,FRANCE
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 03期
关键词：
D O I：
10.1109/23.299800
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Investigations of test circuit parameters in a mixed analog-digital technology (including CMOS, PJFET and NPN) are presented. The changes in electrical parameters as a function of the level of radiation up to 10 Mrad(SiO2) and 3.8 10(14) neutrons/cm2 are reported. Analysis pertains to hardness limiting mechanisms identification.
引用
收藏
页码：565 / 571
页数：7
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