COMPARISON OF BACKSCATTERING PARAMETERS USING HIGH-ENERGY OXYGEN AND HELIUM IONS

被引:26
作者
PETERSSON, S
TOVE, PA
MEYER, O
SUNDQVIST, B
JOHANSSON, A
机构
[1] INST TECHNOL, 75121 UPPSALA, SWEDEN
[2] TANDEM ACCELERATOR LAB, 75121 UPPSALA, SWEDEN
关键词
D O I
10.1016/0040-6090(73)90032-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:157 / 164
页数:8
相关论文
共 7 条
[1]   PULSE HEIGHT DEFECT AND ENERGY DISPERSION IN SEMICONDUCTOR DETECTORS [J].
HAINES, EL ;
WHITEHEAD, AB .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1966, 37 (02) :190-+
[2]  
LINDHARD J, 1963, MAT FYS MEDD DAN VID, V33, P29
[3]   ANALYSIS OF AMORPHOUS LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS [J].
MEYER, O ;
GYULAI, J ;
MAYER, JW .
SURFACE SCIENCE, 1970, 22 (02) :263-&
[4]  
Northcliffe L. S., 1970, NUCL DATA A, V7, P233
[5]  
PETERSSON S, 1973, UPTEC7328R
[6]  
SIFFERT P, 1968, SEMICONDUCTOR DETECT
[7]  
ZIEGLER JF, RC4288 IBM RES