CRYSTALLIZED AMORPHOUS DEPOSITS FOR RELAXED EPITAXY - CDTE(001) ON GAAS(001)

被引：2

作者：

DHAR, NK ^{[1
]}

WOOD, CEC ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20740

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 07期

关键词：

D O I：

10.1063/1.359855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

When annealed, thin amorphous deposits of highly lattice mismatched materials provide specular crystalline surfaces for epitaxy. Mismatch strain is predominantly relieved by misfit dislocations propagating in the plane of the interface, so that resulting films have low threading dislocation densities. We demonstrate the application of this concept to the growth of (001) oriented CdTe epitaxy on (001) GaAs. (C) 1995 American Institute of Physics.

引用

页码：4463 / 4466

页数：4

共 13 条

[11] STUDY OF THE INITIAL-STAGES OF GROWTH OF CDTE ON (001) GAAS
MAR, HA
SALANSKY, N
CHEE, KT
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 898 - 900
[12] LOW THREADING DISLOCATION DENSITY GAAS ON SI(100) WITH INGAAS/GAAS STRAINED-LAYER SUPERLATTICE GROWN BY MIGRATION-ENHANCED EPITAXY
NOZAWA, K
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (4B): : L668 - L671
[13] THE GROWTH OF HIGH-QUALITY CDTE ON GAAS BY MOLECULAR-BEAM EPITAXY
RENO, JL
CARR, MJ
GOURLEY, PL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02): : 1006 - 1012

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