CRYSTALLIZED AMORPHOUS DEPOSITS FOR RELAXED EPITAXY - CDTE(001) ON GAAS(001)

被引：2
作者：
DHAR, NK [1 ]
WOOD, CEC [1 ]
机构：
[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20740
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 07期
关键词：
D O I：
10.1063/1.359855
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
When annealed, thin amorphous deposits of highly lattice mismatched materials provide specular crystalline surfaces for epitaxy. Mismatch strain is predominantly relieved by misfit dislocations propagating in the plane of the interface, so that resulting films have low threading dislocation densities. We demonstrate the application of this concept to the growth of (001) oriented CdTe epitaxy on (001) GaAs. (C) 1995 American Institute of Physics.
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页码：4463 / 4466
页数：4
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