MONOLITHIC GAALAS-GAAS INFRARED-TO-VISIBLE WAVELENGTH CONVERTER WITH OPTICAL POWER AMPLIFICATION

被引:37
作者
BENEKING, H [1 ]
GROTE, N [1 ]
SVILANS, MN [1 ]
机构
[1] HEINRICH HERTZ INST NACHRICHTEN TECH,BERLIN,FED REP GER
关键词
D O I
10.1109/T-ED.1981.20354
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:404 / 407
页数:4
相关论文
共 13 条
[1]   DESIGN AND FABRICATION OF HIGH-SPEED GAAIAS-GAAS HETEROJUNCTION TRANSISTORS [J].
BAILBE, JP ;
MARTY, A ;
HIEP, PH ;
REY, GE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1160-1164
[2]   HIGH-GAIN WIDE-GAP-EMITTER GA1-XALXAS-GAAS PHOTOTRANSISTOR [J].
BENEKING, H ;
MISCHEL, P ;
SCHUL, G .
ELECTRONICS LETTERS, 1976, 12 (16) :395-396
[3]   IMPROVED TECHNIQUE FOR PREPARATION OF GAXAL1-XAS ELECTROLUMINESCENT DIODES [J].
BENEKING, H ;
SCHUL, G ;
MISCHEL, P .
ELECTRONICS LETTERS, 1972, 8 (01) :16-&
[4]   GAAS-GAAIAS ANTI-STOKES LIGHT CONVERTER [J].
BENEKING, H ;
SCHUL, G ;
MISCHEL, P ;
GATTUNG, A .
ELECTRONICS LETTERS, 1974, 10 (16) :346-347
[5]   GAAS-GAALAS PHOTOTRANSISTOR-LASER LIGHT AMPLIFIER [J].
BENEKING, H ;
GROTE, N ;
ROTH, W ;
SVILANS, MN .
ELECTRONICS LETTERS, 1980, 16 (15) :602-603
[6]   (GAAL)AS-GAAS HETEROJUNCTION PHOTOTRANSISTORS WITH HIGH-CURRENT GAIN [J].
KONAGAI, M ;
KATSUKAWA, K ;
TAKAHASHI, K .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4389-4394
[7]  
KRUSE PW, 1967, J APPL PHYS, V4, P1718
[8]   AL0.5GA0.5AS-GAAS HETEROJUNCTION PHOTOTRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
MILANO, RA ;
WINDHORN, TH ;
ANDERSON, ER ;
STILLMAN, GE ;
DUPUIS, RD ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1979, 34 (09) :562-564
[9]   INSB-GAASP INFRARED TO VISIBLE LIGHT CONVERTER [J].
PHELAN, RJ .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1501-&
[10]  
PLIHAL M, 1976, SIEMENS Z, V50, P167