CATHODOLUMINESCENCE OF INP

[1] ALIEV SA, 1965, FIZ TVERD TELA+, V7, P1287

[2] CURRENT STATUS OF PREPARATION OF SINGLE-CRYSTALS, BICRYSTALS, AND EPITAXIAL LAYERS OF P-INP AND OF POLYCRYSTALLINE P-INP FILMS FOR PHOTOVOLTAIC APPLICATIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 39 (01) : 137 - 150

[3] Beattie A.R., 1958, P R SOC LOND, V249, P16

[4] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358

[5] EVIDENCE FOR DONOR-ACCEPTOR RECOMBINATION IN INP BY TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (04) : 445 - &

[6] Heim U., 1970, J LUMIN, V1, P542

[7] JOYCE BD, 1970, S GAAS, P57

[8] PENETRATION AND ENERGY-LOSS THEORY OF ELECTRONS IN SOLID TARGETS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) : 43 - &

[9] THERMAL CONDUCTIVITY + SEEBECK COEFFCIENT OF INP [J]. PHYSICAL REVIEW, 1964, 133 (6A): : 1665 - +

[10] RADIATIVE RECOMBINATION IN N-TYPE INP [J]. PHYSICAL REVIEW, 1967, 157 (03): : 672 - &

[1] ALIEV SA, 1965, FIZ TVERD TELA+, V7, P1287

[2] CURRENT STATUS OF PREPARATION OF SINGLE-CRYSTALS, BICRYSTALS, AND EPITAXIAL LAYERS OF P-INP AND OF POLYCRYSTALLINE P-INP FILMS FOR PHOTOVOLTAIC APPLICATIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 39 (01) : 137 - 150

[3] Beattie A.R., 1958, P R SOC LOND, V249, P16

[4] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358

[5] EVIDENCE FOR DONOR-ACCEPTOR RECOMBINATION IN INP BY TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (04) : 445 - &

[6] Heim U., 1970, J LUMIN, V1, P542

[7] JOYCE BD, 1970, S GAAS, P57

[8] PENETRATION AND ENERGY-LOSS THEORY OF ELECTRONS IN SOLID TARGETS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) : 43 - &

[9] THERMAL CONDUCTIVITY + SEEBECK COEFFCIENT OF INP [J]. PHYSICAL REVIEW, 1964, 133 (6A): : 1665 - +

[10] RADIATIVE RECOMBINATION IN N-TYPE INP [J]. PHYSICAL REVIEW, 1967, 157 (03): : 672 - &